MJE13005 NPN Transistor : Pin Configuration & Its Working

The switch-mode series NPN silicon power transistor like MJE13005 NPN transistor is mainly designed for high speed and voltage power switching circuits wherever drop time is significant. They are mainly suitable for switch-mode applications of 115V & 220V like inverters, switching regulator, controlling of motors, relay drivers, solenoid, etc


This article discusses an overview of the TO220 packaged MJE13005 transistor/ 13005 pinout, specifications, features, and applications.

What is MJE13005 NPN Transistor?

MJE13005 NPN Transistor also known as 13005. It is a high voltage & speeds BJT transistor with a TO-220 package. This transistor is mainly applicable for high voltage-based applications. This transistor is suitable for high-speed switching & high voltage-based applications wherever switching speed is significant.

MJE13005 NPN Transistor
MJE13005 NPN Transistor

The collector-emitter (CE) voltage is equal to 400V so that this transistor is consistent to utilize in several electronic applications below 400V. In addition, the 4A of collector current will also make it capable to drive different loads once used as a switch.

A 13005 transistor can also be employed as an amplifier. The dissipation of collector current like 75W will make it perfect to utilize in audio amplifier circuits. Even though this transistor is designed for high voltage-based applications however it can also be utilized like an amplifier or a switch with less voltage & circuits which operate through the battery.

This transistor has extremely little drop time so it is appropriate for switching AC voltage for inverter & converter applications.

Design/Construction

This transistor includes three layers where one layer is p-doped & the other two layers are n-doped. The p-doped layer of this transistor is arranged between two N-doped layers.

This transistor is one kind of semiconductor device and designed with silicon (Si) material. It includes three terminals namely emitter (E), base (B) & collector (C). It is a current-controlled device that is quite opposite to MOSFET because MOSFET is voltage controlled device and it includes three terminals namely source, drain & gate.

These three terminals hold dissimilar doping concentrations. The concentration of doping for the collector pin is low whereas the emitter pin is high and the base pin is doped above ten times. In addition, the emitter terminal holds the whole current of the device because it is the amount of both base & collector current.

The BJTs are mostly classified into two types like PNP and NPN transistors. Here both holes and electrons play a key role in the conductivity of both the transistors. As compared to PNP, NPN transistors are chosen for a wide range of applications as the electron’s mobility is enhanced as compared to the holes.


Sometimes, NPN devices are called sinking devices because they sink the GND terminal to the output. Similarly, PNP devices are known as sourcing devices because they provide positive power toward the o/p.

Pin Configuration

Pin configuration of MJE13005 NPN Transistor is shown below. This transistor includes three pins where each pin and its functionality are discussed below.

MJE13005 Transistor Pin Configuration
MJE13005 Transistor Pin Configuration
  • Pin1 (Base): This base terminal controls the transistor biasing, so used to switch ON/OFF the transistor
  • Pin2 (Collector): Current supplies throughout the collector terminal and it is generally allied to load
  • Pin3 (Emitter): Flow of current drains out throughout emitter terminal, usually connected to GND.

Specifications and Features

The specifications and features of the MJE13005 NPN transistor include the following.

  • The type of package is TO-220
  • NPN type Transistor
  • Collector Current Max (Ic) is 4A
  • Collector-Emitter Voltage Max (VCE) is 400V
  • Collector Base Voltage Max (VCB) is 700V
  • Emitter Base Voltage Max (VEBO) is 9V
  • Collector Dissipation Max (Pc) is75 Watt
  • Transition Frequency Max (fT) is 4 MHz
  • DC Current Gain Min & Max (hFE) ranges from 10 to 60
  • Storage and operating temperature max should be from -65 to +150 C
  • Max Base current (IB) is 2A

Equivalent and Alternative MJE13005 NPN transistors are ST13005, BUJ103A, MJE13004, 2N6499, 2SC2535, 2SC2333, 2SC2536, 2SD271, 2SC2552, 2SD272, 2SD423, 2SD422, 2SD518, 2SD724, 2SD622, KSE13004, MJ4380, KSE13005, MJ4401, MJE53T, MJE53, TIP75, TIP75B, TIP75A & TIP75C.

Different high voltage transistors are accessible with somewhat diverse voltage & ampere. We can also use MJE13003, MJE13007, MJE13006, MJE13009 and MJE13008.

How to Run this Transistor Safely?

To run this transistor for a long time and protect this, the following precautions must be taken.

  • For better performance and long life, we should not use this transistor to its highest limits. So it is better to use a minimum under 20% of its maximum ratings.
  • The max load current range is up to 4A, but we should drive the load in between 3.2A – 3.5A.
  • The highest load voltage is 400V but we have to maintain in between 300V – 320V DC.
  • An appropriate heat sink must be used along with the transistor & it must be operating in the range of temperature like -65 to +150o C.

How to use MJE13005 NPN Transistor?

This transistor works from the base terminal. Once the voltage is given at the base terminal, then the transistor is biased & the flow of current will be from collector terminal to emitter.

These bipolar junction transistors are not symmetrical components which means if we swap both collector & emitter terminals, then it stops both the terminals to function in forward active mode. Consequently, these two terminals will work in reverse active mode and will affect the current gains of CE current & CB.

The CE current gain of this transistor ranges from 8-40 within this device & it is indicated by beta whereas the CB current gain is indicated through alpha.

The application circuit of wireless power transmission with MJE13005 NPN transistor is shown below. In the following wireless power transmission circuit, the MJE13005 NPN transistor is used. This power transmission circuit works on the mutual inductance principle and it gives power to an LED without using any connecting wires at a two inches distance.

Wireless Power Transmission with MJE13005 Transistor
Wireless Power Transmission with MJE13005 Transistor

The required components to build this circuit are;

  • Insulated Copper Wire with 0.25mm
  • MJE13005 NPN transistor – 1
  • 22 Ohm & 1 Watt Resistor – 1
  • Non-Polar Capacitor – 0.01uF -1
  • 50V & 22uF Capacitor -1
  • LED -1
  • PCB Board – 1
  • Battery (1.5 to 9V) – 1
  • Connecting wires
  • Required tools are soldering kits, knife or scissors.

The wireless power transmission circuit includes is two different sections like the transmitter (Tx) & the receiver (Rx).

In the above circuit, an oscillator circuit is used as a transmitter circuit that includes a striking resemblance toward the Joule circuit. But, the receiver (Rx) circuit is connected directly toward the load.

Where to use/Applications

The applications of the MJE13005 NPN transistor include the following.

The MJE13005 NPN transistor includes 400V of collector Emitter voltage & 4A of collector current. The switching speed of this transistor is 0.9uS and it makes an ideal choice within high speed & voltage switching circuits for different applications like inverters and converters.

  • It is also applicable in solenoid driver or simple relay circuits due to its capacity to handle upto 8A of peak current
  • This MJE13005 transistor is used in different applications like high voltage-based power supplies, motor controllers, inverters, battery chargers, UPS, etc.
  • It is used to design a high-power amplifier otherwise a separate amplifier for driving a speaker. It
  • UPS or Uninterrupted Power Supplies
  • Circuits like power supply, inverter & battery charger circuits
  • Motor Controllers
  • Audio Amplifiers
  • Used in voltage regulator & H-bridge circuits.
  • In current electronic circuits
  • Used in Astable & Bistable Multivibrators
  • Used in the SMPS

Thus, this is all about an overview of the MJE13005 NPN transistor datasheet. These transistors are mainly designed for high−voltage and high−speed power switching inductive circuits wherever drop time is important. MJE13005 Power Transistor is mainly suitable for 115 & 220 V-based switch mode applications like inverters, switching regulators, motor controls, relay drivers, solenoid & deflection circuits. Here is a question for you, what are the different types of NPN transistors available?

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